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首頁(yè) >2SJ506(L)|2SJ506(S)>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistanceRDS(on)=0.065?typ.(atVGS=–10V,ID=–5A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features ?Lowon-resistanceRDS(on)=0.065?typ.(atVGS=–10V,ID=–5A) ?Lowdrivecurrent ?Highspeedswitching ?4Vgatedrivedevices. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.065typ.(atVGS=-10V,ID=-5A) Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
SiliconPChannelMOSFET *Lowon-resistance RDS(on)=0.065?typ.(atV GS=–10V,ID=–5A) *Lowdrivecurrent *Highspeedswitching *4Vgatedrivedevices. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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